New Vishay Intertechnology Gen 3 1200 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs
June 27, 2024
June 27, 2024
MALVERN, Pennsylvania, June 27 -- Vishay Intertechnology Inc. issued the following news release on June 25, 2024:
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Featuring an MPS Design, 5 A to 40 A Devices Offer Lower Forward Voltage Drop, Capacitive Charge, and Reverse Leakage Current
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Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices . . .
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Featuring an MPS Design, 5 A to 40 A Devices Offer Lower Forward Voltage Drop, Capacitive Charge, and Reverse Leakage Current
* * *
Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices . . .