PISCATAWAY, New Jersey, Oct. 28 -- IEEE Electron Device Letters, a peer-reviewed journal from the Institute of Electrical and Electronics Engineers that says it features electron and ion integrated circuit devices and interconnects, published research articles on the following topics in its November 2023 edition (Vol. 44, Issue 11):

* Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT

* A Novel SiC Trench MOSFET Embedding Auto-Adjust Source- . . .

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